Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates
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DOI: 10.1063/5.0222572
Abstract: Time-dependent conduction in epitaxial superlattice (SL) strain relief layers of GaN high electron mobility transistors on 200 mm engineered substrates with a poly-AlN core was observed and analyzed. This phenomenon occurs when the devices were operated… read more here.
Keywords: engineered substrates; time dependent; layers gan; dependent conduction ... See more keywords