Optical properties of N-polar GaN: The possible role of nitrogen vacancy-related defects
Sign Up to like & getrecommendations! Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2021.150734
Abstract: Abstract Detailed comparison of optical quality of GaN layers grown homoepitaxially on bulk Ga-polar and N-polar substrates by plasma-assisted molecular beam epitaxy was performed. One order of magnitude lower photoluminescence (PL) intensity and decay time… read more here.
Keywords: vacancy related; nitrogen vacancy; layers grown; polar substrates ... See more keywords
Properties of MAPbI3 perovskite layers grown with HCl additions
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.05.033
Abstract: Abstract Lead halide perovskites, used to produce photovoltaic devices, have been the subject of a huge research effort these last years. This is due to the spectacular improvement of the conversion efficiency results within a… read more here.
Keywords: hcl additions; perovskite layers; properties mapbi3; mapbi3 perovskite ... See more keywords
Preparation and properties of GaN:Al layers grown by radio-frequency magnetron sputter epitaxy
Sign Up to like & getrecommendations! Published in 2017 at "Vacuum"
DOI: 10.1016/j.vacuum.2017.01.017
Abstract: Abstract Ga-rich Al x Ga 1– x N ( x « 0.01) (GaN:Al) single-crystalline layers were grown by radio-frequency magnetron sputter epitaxy using N 2 /Ar gas and a 6-N grade AlGa alloy target. When… read more here.
Keywords: gan layers; frequency magnetron; radio frequency; grown radio ... See more keywords
Comparison of a-C:N:H layers grown at the anode and cathode in RF-PACVD processing
Sign Up to like & getrecommendations! Published in 2017 at "Vacuum"
DOI: 10.1016/j.vacuum.2017.09.025
Abstract: Abstract Formation of amorphous hydrogenated carbon nitride layers, a-C:N:H, by radio frequency plasma - assisted chemical vapour deposition, RF-PACVD, 13.56 MHz, is studied. The repeatability of the process is examined in a series of experiments conducted… read more here.
Keywords: anode cathode; pacvd; cathode; layers grown ... See more keywords
Effect of different buffer layers on the quality of InGaN layers grown on Si
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5046756
Abstract: This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction… read more here.
Keywords: buffer layers; ingan layers; effect; quality ingan ... See more keywords
Effect of antimony doping on the energy of optical transitions in n-Ge layers grown on Si (001) and Ge (001) substrates
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Applied Physics"
DOI: 10.1063/1.5140072
Abstract: Comparative studies of the bandgap narrowing in antimony doped Ge layers grown on Si(001) and Ge(001) substrates are reported. The doping level in Ge:Sb layers was varied in such a way as to obtain structures… read more here.
Keywords: bandgap narrowing; grown 001; antimony; layers grown ... See more keywords
Near-infrared stimulated emission from indium-rich InGaN layers grown by plasma-assisted MBE
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0047674
Abstract: We report on the stimulated emission (SE) in the near-infrared range from the planar InGaN epitaxial layers grown on sapphire substrates. By varying the indium content from 100% to 75%, the emission wavelength is tunable… read more here.
Keywords: ingan layers; near infrared; indium; layers grown ... See more keywords
Study of lithium incorporation in (111) NiO epitaxial layers grown on c-sapphire substrates using the pulsed laser deposition technique
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/accc41
Abstract: Incorporation of lithium in (111) NiO epitaxial layers grown using the pulsed layer deposition technique on c-sapphire substrates is studied as functions of growth conditions. The effect of Li-inclusion on the structural, morphological, electrical and… read more here.
Keywords: using pulsed; epitaxial layers; 111 nio; incorporation ... See more keywords
Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15031050
Abstract: This study examined the microstructural gradation in Sn-doped, n-type Ga2O3 epitaxial layers grown on a two-inch sapphire substrate using horizontal hot-wall mist chemical vapor deposition (mist CVD). The results revealed that, compared to a single… read more here.
Keywords: mist chemical; grown using; layer; chemical vapor ... See more keywords
Thick epitaxial GaAsBi layers for terahertz components: the role of growth conditions
Sign Up to like & getrecommendations! Published in 2018 at "Lithuanian Journal of Physics"
DOI: 10.3952/physics.v58i1.3658
Abstract: A series of 1.5 μm-thick epitaxial GaAsBi layers have been grown by molecular beam epitaxy on semi-insulating GaAs(100) substrates at temperatures ranging from 300 to 370°C. Complex studies were carried out with a focus to… read more here.
Keywords: gaasbi layers; epitaxial gaasbi; thick epitaxial; layers terahertz ... See more keywords