Dislocation characterization in c-plane GaN epitaxial layers on 6 inch Si wafer with a fast second-harmonic generation intensity mapping technique
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DOI: 10.1088/1361-6528/acb4a0
Abstract: Second harmonic generation (SHG) intensity, Raman scattering stress, photoluminescence and reflected interference pattern are used to determine the distributions of threading dislocations (TDs) and horizontal dislocations (HDs) in the c-plane GaN epitaxial layers on 6… read more here.
Keywords: epitaxial layers; second harmonic; intensity; gan epitaxial ... See more keywords