Self-Adaption of the GIDL Erase Promotes Stacking More Layers in 3D NAND Flash
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14030686
Abstract: The bit density is generally increased by stacking more layers in 3D NAND Flash. Gate-induced drain leakage (GIDL) erase is a critical enabler in the future development of 3D NAND Flash. The relationship between the… read more here.
Keywords: gidl erase; nand flash; stacking layers; layers nand ... See more keywords