Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy
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DOI: 10.1134/s1063782619060150
Abstract: This work reports on the epitaxial-film growth and characterization of a new wide-gap semiconductor α-Ga2O3. Layers are deposited by chloride vapor phase epitaxy on sapphire substrates with a basal orientation. The thickness of the layers… read more here.
Keywords: ga2o3 layers; thick ga2o3; ga2o3; layers sapphire ... See more keywords