Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors
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DOI: 10.1063/1.5123374
Abstract: Interfaces containing misfit dislocations deteriorate electronic properties of heteroepitaxial wide bandgap III-nitride semiconductors grown on foreign substrates, as a result of lattice and therma... read more here.
Keywords: epitaxial growth; aln nucleation; layers sic; growth aln ... See more keywords