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Published in 2020 at "Semiconductors"
DOI: 10.1134/s106378262002013x
Abstract: Abstract The results of studying the structure and processes of dielectric relaxation in thin layers of Ge–Sb–Te are presented. The found permittivity dispersion and occurrence of dielectric-loss maxima in the low-frequency region are explained by…
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Keywords:
structural dielectric;
thin amorphous;
amorphous layers;
dielectric study ... See more keywords