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Published in 2018 at "Lithuanian Journal of Physics"
DOI: 10.3952/physics.v58i1.3658
Abstract: A series of 1.5 μm-thick epitaxial GaAsBi layers have been grown by molecular beam epitaxy on semi-insulating GaAs(100) substrates at temperatures ranging from 300 to 370°C. Complex studies were carried out with a focus to…
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Keywords:
gaasbi layers;
epitaxial gaasbi;
thick epitaxial;
layers terahertz ... See more keywords