Layout dependent hot-carrier-injection-induced pLDMOS degradation from a non-destructive characterization viewpoint
Sign Up to like & getrecommendations! Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2021.108150
Abstract: Abstract Vgmax Hot-Carrier-Injection (HCI) degradation in Multi-finger p-Laterally-Diffused Metal-Oxide-Semiconductor Field-Effect-Transistors (LDMOSFET) had been investigated by Multi-Region Direct-Current-Current-Voltage (MR-DCIV) characterization method-probing the interface state distribution along the channel, accumulation and (Shallow Trench Isolation) STI-drift region. The… read more here.
Keywords: degradation; hot carrier; layout dependent; carrier injection ... See more keywords
Modeling and Controlling Layout Dependent Variations in Semi-Additive Copper Electrochemical Plating
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Semiconductor Manufacturing"
DOI: 10.1109/tsm.2019.2941439
Abstract: An empirical model is proposed for predicting layout dependent thickness variations in the semi-additive copper electrochemical plating (ECP) process. These variations are believed to be caused by the uneven depletion of copper sulfate during plating,… read more here.
Keywords: variations semi; semi additive; copper; layout dependent ... See more keywords