The Impact of LCE and PAMDLE Regarding Different CMOS ICs Nodes and High Temperatures
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DOI: 10.1109/jeds.2021.3071399
Abstract: This paper describes the influence of Longitudinal Corner Effect (LCE effect) and PArallel Connection of Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs) with Different Channel Lengths Effect (PAMDLE effect) of Diamond (hexagonal gate shape) MOSFET in different Complementary… read more here.
Keywords: different cmos; cmos ics; high temperatures; effect ... See more keywords