Investigation of the on-state behaviors of the variation of lateral width LDMOS device by simulation
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/39/11/114007
Abstract: The main content revolves round the on-state characteristics of the variation of a lateral width (VLW) LDMOS device. A three-dimensional numerical analysis is performed to investigate the specific on-resistance of the VLW LDMOS device, the… read more here.
Keywords: device simulation; variation lateral; ldmos device; lateral width ... See more keywords
A Novel High-Voltage Pseudo-p-LDMOS Device With Three Current Conductive Paths
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2882016
Abstract: A new concept high-voltage pseudo-p-channel lateral double-diffused MOS (p-LDMOS) with multiple current paths for conduction is proposed and investigated in this paper. The proposed power device consists of two hole current paths (p-channel MOS device)… read more here.
Keywords: high voltage; voltage pseudo; ldmos device; device ... See more keywords
Design of LDMOS Device Modeling Method Based on Neural Network
Sign Up to like & getrecommendations! Published in 2022 at "Computational Intelligence and Neuroscience"
DOI: 10.1155/2022/4988636
Abstract: The rapid development of power semiconductor devices is helping to realize a low-carbon society and provide a better life for everyone. Power semiconductors not only are used in many large-scale industrial control fields such as… read more here.
Keywords: neural network; power; voltage; ldmos device ... See more keywords