Channel Length Optimization for Planar LDMOS Field-Effect Transistors for Low-Voltage Power Applications
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DOI: 10.1109/jeds.2020.3008388
Abstract: We identify an optimum channel length for planar Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) field-effect transistors, in terms of the specific on-resistance, through systematic device simulation and optimization. We simulate LDMOS devices with different channel lengths ranging… read more here.
Keywords: low voltage; effect transistors; ldmos field; length ... See more keywords