Leakage and breakdown mechanisms of GaN vertical power FinFETs
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DOI: 10.1063/1.5092433
Abstract: This work studies the leakage and breakdown mechanisms of 1.2 kV GaN vertical power FinFETs with edge termination. Two competing leakage and breakdown mechanisms have been identified. The first mechanism is dominated by the electric field,… read more here.
Keywords: barrier; mechanism; gan vertical; power ... See more keywords