Sneak, discharge, and leakage current issues in a high-dimensional 1T1M memristive crossbar
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-020-01470-0
Abstract: Memristive crossbar arrays are believed to be the future of high-density nonvolatile memory and neuromorphic systems. However, significant challenges related to the passive crossbar architecture, for example, the sneak current issue, impose limitations on their… read more here.
Keywords: 1t1m memristive; sneak discharge; discharge leakage; memristive crossbar ... See more keywords
Reduction the leakage current through povidone-SiO2 nano-composite as a promising gate dielectric of FETs
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-017-7167-0
Abstract: In the present study, povidone-SiO2 nano-composite dielectric film was introduced to replace SiO2 gate dielectric film. The organic and inorganic particles homogeneously dispersed in nano-composite film. The structure of nano-composite film was affected by annealing… read more here.
Keywords: povidone sio2; nano composite; gate dielectric; sio2 nano ... See more keywords
Improved Ferroelectric and Ferromagnetic Properties of 1 − xBiFeO3-xBaTiO3 Ceramics
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Superconductivity and Novel Magnetism"
DOI: 10.1007/s10948-018-4795-4
Abstract: This paper introduces the solid-phase preparation of bismuth ferrite-based multiferroic ceramics (1 − x BiFeO3-x BaTiO3). After the Ba and Ti doping, it can be observed from the XRD pattern that the crystal structure of… read more here.
Keywords: ferroelectric ferromagnetic; ferromagnetic properties; improved ferroelectric; doped samples ... See more keywords
Regrown Vertical GaN p–n Diodes with Low Reverse Leakage Current
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-019-07098-6
Abstract: Vertical c-plane GaN p–n diodes, where the p-GaN layer is formed by epitaxial regrowth using metal–organic chemical-vapor deposition, are reported. Current–voltage (I–V) performance similar to continuously grown p–n diodes is demonstrated, including low reverse leakage… read more here.
Keywords: leakage; regrowth; gan diodes; low reverse ... See more keywords
Trapping Effects on Leakage and Current Collapse in AlGaN/GaN HEMTs
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-020-08299-0
Abstract: In this paper, we showcase our investigation regarding the effect of acceptor traps in GaN buffer and AlGaN barrier layers on the leakage current and current collapse in GaN high-electron-mobility transistors. The dependence of current… read more here.
Keywords: barrier; collapse; layer; current collapse ... See more keywords
Reduction of leakage current in amorphous Oxide-Semiconductor Top-gated thin film transistors by interface engineering with dipolar Self-Assembled monolayers
Sign Up to like & getrecommendations! Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2021.151029
Abstract: Abstract Top gate (TG) thin film transistors (TFTs) featuring amorphous metal oxide semiconductors (a-MOS), such as indium-gallium-zinc-oxide (IGZO), bear a great potential for large-area flexible and transparent electronics. The fabrication costs of these devices can… read more here.
Keywords: leakage; self assembled; thin film; assembled monolayers ... See more keywords
Ternary Gd Y O high k oxide films for next-generation gate dielectrics and their annealing temperature effects
Sign Up to like & getrecommendations! Published in 2019 at "Ceramics International"
DOI: 10.1016/j.ceramint.2019.02.140
Abstract: Abstract As the feature size of integrated circuits continues to shrink, the key challenge is to find suitable gate dielectric materials to replace SiO2 and HfO2 to reduce leakage current density. In this work, ternary… read more here.
Keywords: gate dielectrics; spectroscopy; current density; annealing temperature ... See more keywords
Effective strategy for optimizing the leakage current and ferroelectric polarization characteristics of BiFeO3_PVDF-TrFE nanocomposite films
Sign Up to like & getrecommendations! Published in 2021 at "Ceramics International"
DOI: 10.1016/j.ceramint.2021.04.276
Abstract: Abstract BiFeO3 has been extensively studied as an important single-phase multiferroic material at room temperature in the application fields of energy storage, data storage, spintronics, and electro-magnetic sensors. However, the high leakage current caused by… read more here.
Keywords: pvdf trfe; leakage; nanocomposite films; bifeo3 pvdf ... See more keywords
Temperature dependence of ferroelectric property and leakage mechanism in Mn-doped Pb(Zr0.3Ti0.7)O3 films
Sign Up to like & getrecommendations! Published in 2021 at "Ceramics International"
DOI: 10.1016/j.ceramint.2021.05.114
Abstract: Abstract High-quality ferroelectric films of Mn-doped Pb(Zr0.3Ti0.7)O3 (PMZT) were prepared using the sol-gel method, and the temperature dependence of ferroelectric, dielectric, and leakage current properties (J–E) were explored in detail using the top electrode/ferroelectric films/bottom… read more here.
Keywords: temperature dependence; zr0 3ti0; leakage; doped zr0 ... See more keywords
Single phase transformerless inverter topology with reduced leakage current for grid connected photovoltaic system
Sign Up to like & getrecommendations! Published in 2018 at "Electric Power Systems Research"
DOI: 10.1016/j.epsr.2017.08.031
Abstract: Abstract Leakage current is the main concern of the grid connected transformerless photovoltaic (PV) inverters. Many single phase transformerless inverter topologies with reduced leakage current have been introduced in the past few years. These are… read more here.
Keywords: inverter; cmv; topology; grid ... See more keywords
Modified ferroelectric/magnetic and leakage current density properties of Co and Sm co-doped bismuth ferrites
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2016.12.278
Abstract: Pure and doped multiferroic samples of bismuth ferrite (BFO) were successfully synthesized by the sol-gel technique. Detailed investigations were made on the influence of (Sm and Co) doping on structural, ferroelectric, magnetic, dielectric and leakage… read more here.
Keywords: density properties; doping bfo; current density; leakage ... See more keywords