Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment
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DOI: 10.3390/mi11010101
Abstract: We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically,… read more here.
Keywords: algan aln; vertical leakage; leakage; gan algan ... See more keywords