A low-leakage and high-writable SRAM cell with back-gate biasing in FinFET technology
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DOI: 10.1007/s10825-019-01327-1
Abstract: This paper presents a novel low-leakage and high-writable 8T SRAM cell based on FinFET technology. This cell reduces leakage current and consequently leakage power by dynamically adjusting the back gate of the stacked independent-gate FinFET… read more here.
Keywords: leakage high; sram cell; cell; high writable ... See more keywords