Sensitive Silicon Nanowire Ultraviolet B Photodetector Induced by Leakage Mode Resonances.
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DOI: 10.1021/acsami.2c04606
Abstract: Ultraviolet photodetectors (UVPDs) have played an important role both in civil and military applications. While various studies have shown that traditional UVPDs based on wide-band-gap semiconductors (WBSs) have excellent device performances, it is, however, undeniable… read more here.
Keywords: silicon nanowire; mode resonances; leakage mode; sensitive silicon ... See more keywords