The Efficiency Droop of InGaN-Based Green LEDs with Different Superlattice Growth Temperatures on Si Substrates via Temperature-Dependent Electroluminescence*
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DOI: 10.1088/0256-307x/34/7/077301
Abstract: InGaN-based green light-emitting diodes (LEDs) with different growth temperatures of superlattice grown on Si (111) substrates are investigated by temperature-dependent electroluminescence between 100 K and 350 K. It is observed that with the decrease of… read more here.
Keywords: based green; temperature; leds different; ingan based ... See more keywords