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Low driven voltage red LEDs using Eu-doped Ga2O3 films on GaAs

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Published in 2019 at "Applied Physics Express"

DOI: 10.7567/1882-0786/ab2056

Abstract: Red LEDs based on Eu:Ga2O3/GaAs heterojunctions were fabricated using a pulsed laser deposition method. Eu-related luminescence originating from the 5D0–7F2 transition of Eu3+ was observed at about 611 nm. Bright red light can be observed… read more here.

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