OFF-State Leakage Suppression in Vertical Electron–Hole Bilayer TFET Using Dual-Metal Left-Gate and N+-Pocket
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DOI: 10.3390/ma15196924
Abstract: In this paper, an In0.53Ga0.47As electron–hole bilayer tunnel field-effect transistor (EHBTFET) with a dual-metal left-gate and an N+-pocket (DGNP-EHBTFET) is proposed and systematically studied by means of numerical simulation. Unlike traditional transverse EHBTFETs, the proposed… read more here.
Keywords: state; dual metal; left gate; pocket ... See more keywords