Raised Body Doping-Less 1T-DRAM With Source/Drain Schottky Contact
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DOI: 10.1109/jeds.2019.2896412
Abstract: In this paper, we propose a novel structure of doping-less 1T-DRAM with raised body and Schottky contact to source/drain regions which uses thermionic emission to generate electrons and holes. As the device is free from… read more here.
Keywords: less dram; schottky contact; doping less; source drain ... See more keywords