Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templates
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DOI: 10.1039/c9ce01151j
Abstract: Process diagram for achieving pure Ga-polar and site-controlled growth of n-GaN nanowires on conductive n-Si-AlN templates using MOVPE. read more here.
Keywords: mask less; gan nanowires; less movpe; site ... See more keywords