Adaptive Multi-Level Active Gate Drivers for SiC Power Devices
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DOI: 10.1109/tpel.2019.2922112
Abstract: State-of-the-art silicon carbide (SiC) power devices provide superior performance over silicon devices with much higher switching frequencies/speed and lower losses. High switching speed is preferred for achieving low switching loss, yet high dv/dt and di/dt… read more here.
Keywords: power devices; level active; power; gate ... See more keywords