Photoluminescence Study of Deep Level Defects in ZnO Thin Films
Sign Up to like & getrecommendations! Published in 2018 at "Silicon"
DOI: 10.1007/s12633-018-9876-2
Abstract: In the present work, zinc oxide (ZnO) thin films were prepared by heating, at 500 ∘C, metallic Zn films deposited onto Si (100) substrates by RF magnetron sputtering. According to the x-rays diffraction patterns, the… read more here.
Keywords: thin films; deep level; zno thin; level defects ... See more keywords
Investigation of two-level defects in injection dependent lifetime spectroscopy
Sign Up to like & getrecommendations! Published in 2020 at "Solar Energy Materials and Solar Cells"
DOI: 10.1016/j.solmat.2020.110692
Abstract: Abstract In the majority of studies involving injection dependent lifetime spectroscopy, it is assumed that the investigated defect is a single-level defect following Shockley-Read-Hall recombination statistics. Nevertheless, in real life, two-level defects or multi-level defects… read more here.
Keywords: two level; injection dependent; lifetime spectroscopy; level ... See more keywords
Tunneling current in w-GaN/AlN(0001) structures with deep-level defects
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.06.034
Abstract: Abstract The influence of the interface deep-level defects on the tunneling current of a double-barrier w-AlN/GaN (0001) structure is studied. It is shown that the peculiarities of the current essentially depend on the positions of… read more here.
Keywords: deep level; level; defects tunneling; aln ... See more keywords
Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties
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DOI: 10.1038/s41598-017-13191-9
Abstract: Deep-level defects in n-type GaAs1−xBix having 0 ≤ x ≤ 0.023 grown on GaAs by molecular beam epitaxy at substrate temperature of 378 °C have been injvestigated by deep level transient spectroscopy. The optical properties of the layers have been… read more here.
Keywords: defects type; deep level; level; gaasbi ... See more keywords
Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors
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DOI: 10.1063/1.5011327
Abstract: The term junction spectroscopy embraces a wide range of techniques used to explore the properties of semiconductor materials and semiconductor devices. In this tutorial review, we describe the most widely used junction spectroscopy approaches for… read more here.
Keywords: junction spectroscopy; level defects; spectroscopy; deep level ... See more keywords