Active Passivation of Anion Vacancies in Antimony Selenide Film for Efficient Solar Cells
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Materials"
DOI: 10.1002/adma.202404826
Abstract: Binary antimony selenide (Sb2Se3) is a promising inorganic light‐harvesting material with high stability, nontoxicity, and wide light harvesting capability. In this photovoltaic material, it has been recognized that deep energy level defects with large carrier… read more here.
Keywords: film; sb2se3; solar cells; level defects ... See more keywords
Suppressing Non-Radiative Recombination via Shallow-Level Defect Capture-Release Mechanism in Calcium Poly(heptazine imide) for Enhanced Photocatalytic Activity.
Sign Up to like & getrecommendations! Published in 2025 at "Small"
DOI: 10.1002/smll.202508481
Abstract: Non-radiative recombination is a key factor restricting photocatalytic efficiency, which leads to the rapid annihilation of photogenerated carriers through deep-level defect centers. Shallow-level defects can suppress non-radiative recombination through a unique carrier capture-release mechanism. Herein,… read more here.
Keywords: level; radiative recombination; shallow level; non radiative ... See more keywords
Photoluminescence Study of Deep Level Defects in ZnO Thin Films
Sign Up to like & getrecommendations! Published in 2018 at "Silicon"
DOI: 10.1007/s12633-018-9876-2
Abstract: In the present work, zinc oxide (ZnO) thin films were prepared by heating, at 500 ∘C, metallic Zn films deposited onto Si (100) substrates by RF magnetron sputtering. According to the x-rays diffraction patterns, the… read more here.
Keywords: thin films; deep level; zno thin; level defects ... See more keywords
Investigation of two-level defects in injection dependent lifetime spectroscopy
Sign Up to like & getrecommendations! Published in 2020 at "Solar Energy Materials and Solar Cells"
DOI: 10.1016/j.solmat.2020.110692
Abstract: Abstract In the majority of studies involving injection dependent lifetime spectroscopy, it is assumed that the investigated defect is a single-level defect following Shockley-Read-Hall recombination statistics. Nevertheless, in real life, two-level defects or multi-level defects… read more here.
Keywords: two level; injection dependent; lifetime spectroscopy; level ... See more keywords
Tunneling current in w-GaN/AlN(0001) structures with deep-level defects
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.06.034
Abstract: Abstract The influence of the interface deep-level defects on the tunneling current of a double-barrier w-AlN/GaN (0001) structure is studied. It is shown that the peculiarities of the current essentially depend on the positions of… read more here.
Keywords: deep level; level; defects tunneling; aln ... See more keywords
Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-13191-9
Abstract: Deep-level defects in n-type GaAs1−xBix having 0 ≤ x ≤ 0.023 grown on GaAs by molecular beam epitaxy at substrate temperature of 378 °C have been injvestigated by deep level transient spectroscopy. The optical properties of the layers have been… read more here.
Keywords: defects type; deep level; level; gaasbi ... See more keywords
Deep-level defects induced by implantations of Si and Mg ions into undoped epitaxial GaN
Sign Up to like & getrecommendations! Published in 2024 at "Scientific Reports"
DOI: 10.1038/s41598-024-65142-w
Abstract: The properties and concentrations of deep-level defects induced by implantations of Si and Mg ions into unintentionally doped (UID) epitaxial GaN have been revealed by using the Laplace-transform photoinduced transient spectroscopy (LPITS) and molecular dynamics… read more here.
Keywords: defects induced; deep level; level defects; implantations ions ... See more keywords
Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5011327
Abstract: The term junction spectroscopy embraces a wide range of techniques used to explore the properties of semiconductor materials and semiconductor devices. In this tutorial review, we describe the most widely used junction spectroscopy approaches for… read more here.
Keywords: junction spectroscopy; level defects; spectroscopy; deep level ... See more keywords