Fermi level depinning in Ti/n-type Ge Schottky junction by the insertion of fluorinated graphene
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2019.04.174
Abstract: Abstract The effect of fluorinated graphene (f-Gr) as the interfacial layer on Fermi level depinning in Ti/n-type Ge Schottky barrier diodes (SBDs) is intensively studied. Electrical properties of the SBDs are characterized by I-V method.… read more here.
Keywords: type schottky; level depinning; fermi level; fluorinated graphene ... See more keywords
Fermi-level depinning in germanium Schottky junction using nitrogen plasma treatment
Sign Up to like & getrecommendations! Published in 2018 at "Electronics Letters"
DOI: 10.1049/el.2018.1066
Abstract: Fermi-level depinning in germanium (Ge) through nitrogen (N2) plasma treatment is demonstrated. The Ge surface was exposed to N2 plasma for 1 min without heat treatment, resulting in the formation of 2.5 nm-thick GeO x… read more here.
Keywords: level depinning; treatment; depinning germanium; nitrogen plasma ... See more keywords
Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2736163
Abstract: A new method of forming an ohmic contact without an increase in parasitic resistance is proposed in the Ti/GeO2/Ge substrate. Fermi-level depinning in Ti/GeO2/n–Ge contacts is possible with the formation of an interfacial TiOx layer… read more here.
Keywords: level depinning; via interfacial; interfacial reaction; geo2 ... See more keywords