Random telegraph noise on the threshold voltage of multi-level flash memory*
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DOI: 10.1088/1674-1056/26/1/018502
Abstract: We investigate the impact of random telegraph noise (RTN) on the threshold voltage of multi-level NOR flash memory. It is found that the threshold voltage variation () and the distribution due to RTN increase with… read more here.
Keywords: voltage; random telegraph; threshold voltage; flash memory ... See more keywords