Customized binary and multi-level HfO2−x-based memristors tuned by oxidation conditions
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-09413-9
Abstract: The memristor is a promising candidate for the next generation non-volatile memory, especially based on HfO2−x, given its compatibility with advanced CMOS technologies. Although various resistive transitions were reported independently, customized binary and multi-level memristors… read more here.
Keywords: level hfo2; multi level; binary multi; customized binary ... See more keywords