Chemical environment dominated Fermi level pinning of a graphene gas sensor
Sign Up to like & getrecommendations! Published in 2017 at "Carbon"
DOI: 10.1016/j.carbon.2017.08.026
Abstract: Abstract The time evolution of the Fermi level of the graphene channel during a gas sensing process is systematically investigated. A Fermi level converging behavior at negative back-gate voltage and a Fermi level pinning behavior… read more here.
Keywords: level pinning; graphene channel; gas; level ... See more keywords
Determination of Carrier Polarity in Fowler-Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride/Metal Interface.
Sign Up to like & getrecommendations! Published in 2018 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.7b18454
Abstract: Hexagonal boron nitride (h-BN) is an important insulating substrate for two-dimensional (2D) heterostructure devices and possesses high dielectric strength comparable to SiO2. Here, we report two clear differences in their physical properties. The first one… read more here.
Keywords: level pinning; boron nitride; hexagonal boron; interface ... See more keywords
2D SnSe-based vdW heterojunctions: tuning the Schottky barrier by reducing Fermi level pinning.
Sign Up to like & getrecommendations! Published in 2018 at "Nanoscale"
DOI: 10.1039/c8nr02843e
Abstract: Two-dimensional (2D) SnSe is a very promising material for semiconducting devices due to its novel properties. However, the contact behavior between a 2D SnSe sheet and a three-dimensional (3D) metal surface shows an un-tunable Schottky… read more here.
Keywords: level pinning; schottky barrier; fermi level; snse sheet ... See more keywords
Fermi-level pinning in methylammonium lead iodide perovskites.
Sign Up to like & getrecommendations! Published in 2019 at "Nanoscale"
DOI: 10.1039/c9nr02643f
Abstract: Hybrid organic inorganic perovskites are ideal candidates for absorber layers in next generation thin film photovoltaics. The polycrystalline nature of these layers imposes substantial complications for the design of high efficiency devices since the optoelectronic… read more here.
Keywords: level pinning; methylammonium lead; pinning methylammonium; lead iodide ... See more keywords
Gap state distribution and Fermi level pinning in monolayer to multilayer MoS2 field effect transistors.
Sign Up to like & getrecommendations! Published in 2020 at "Nanoscale"
DOI: 10.1039/d0nr01379j
Abstract: Gap states and Fermi level pinning play an important role in all semiconductor devices, but even more in transition metal dichalcogenide-based devices due to their high surface to volume ratio and the absence of intralayer… read more here.
Keywords: level pinning; state distribution; fermi level;
Weak Fermi Level Pinning and Low Barrier Interfacial Contact: 2D Lead-free Perovskite on Multilayer GaN
Sign Up to like & getrecommendations! Published in 2024 at "Journal of Materials Chemistry C"
DOI: 10.1039/d4tc03838j
Abstract: Metal halide perovskites (MHPs) have shown great potential in the photovoltaic and electronic fields due to high charge carrier mobility, adjustable band gap and extremely high absorption coefficient. The formation... read more here.
Keywords: fermi level; level pinning; barrier interfacial; pinning low ... See more keywords
Fermi-level pinning of Yu-Shiba-Rusinov states in a superconductor with weakly broken spin-rotational invariance
Sign Up to like & getrecommendations! Published in 2024 at "Physical Review B"
DOI: 10.1103/physrevb.111.224501
Abstract: As is well known, magnetic impurities adsorbed on superconductors, e.g., of the s-wave type, can introduce a bound gap-state (Yu-Shiba-Rusinov resonance). We here investigate within a minimal model how the impurity moment arranges with respect… read more here.
Keywords: fermi level; level pinning; shiba rusinov; self consistency ... See more keywords
Improvement of Fermi-Level Pinning and Contact Resistivity in Ti/Ge Contact Using Carbon Implantation
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13010108
Abstract: Effects of carbon implantation (C-imp) on the contact characteristics of Ti/Ge contact were investigated. The C-imp into Ti/Ge system was developed to reduce severe Fermi-level pinning (FLP) and to improve the thermal stability of Ti/Ge… read more here.
Keywords: carbon implantation; fermi level; imp; contact ... See more keywords