Influence of GaN Surface Fermi Level Position on Carrier Transfer across MAPbI3/GaN Interface
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DOI: 10.1039/d3cp00801k
Abstract: Gallium nitride (GaN) and hybrid organic-inorganic perovskites such as methylammonium lead iodide (MAPbI3) have both significantly influenced the modern optoelectronics. Both marked a new beginning in the development of important... read more here.
Keywords: fermi level; surface fermi; gan surface; level position ... See more keywords