Observation of Si 2p Core‐Level Shift in Si/High‐κ Dielectric Interfaces Containing a Negative Charge
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202100034
Abstract: Negative static charge and induced internal electric field have often been observed in the interfaces between silicon and high‐κ dielectrics, for example Al2O3 and HfO2. The electric field provides either beneficial (e.g., field‐effect passivation) or… read more here.
Keywords: level shift; core level; negative charge; charge ... See more keywords
Half-integer level shift of vortex bound states in an iron-based superconductor
Sign Up to like & getrecommendations! Published in 2019 at "Nature Physics"
DOI: 10.1038/s41567-019-0630-5
Abstract: Vortices in topological superconductors may host Majorana zero modes (MZMs), which have been proposed as the building blocks of fault-tolerant topological quantum computers. Recently, a new single-material platform with the potential for realizing MZMs has… read more here.
Keywords: half integer; integer level; vortex bound; iron based ... See more keywords
Gate-tunable contact-induced Fermi-level shift in semimetal.
Sign Up to like & getrecommendations! Published in 2022 at "Proceedings of the National Academy of Sciences of the United States of America"
DOI: 10.1073/pnas.2119016119
Abstract: SignificanceResistivity comparison methodology was developed to measure and analyze the contact-induced Fermi-level shift (CIFS) as well as the interfacial charge transfer in low-dimensional semimetal-semiconductor (Sm-S) systems. The Fermi-level catch-up model was further built to depict… read more here.
Keywords: gate tunable; contact induced; level shift; fermi level ... See more keywords