Characterization of Deep Levels in AlGaN|GaN HEMT by FT-DLTS and Current DLTS
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DOI: 10.1134/s1063782620100127
Abstract: In this work, GaN|AlGaN high electron mobility transistor (HEMT) structures are investigated, grown on semi-insulating SiC substrates by molecular beam epitaxy and metal–organic chemical-vapor deposition techniques. This paper reports on the kink effect and hysteresis… read more here.
Keywords: levels algan; characterization deep; algan gan; deep levels ... See more keywords