A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/abd959
Abstract: In this paper, we designed a low turn-on voltage (V On) AlGaN/GaN lateral field-effect rectifier (LFER) compatible with p-GaN gate high-electron-mobility transistor (HEMT) technology (PG-LFER). We also established an analytical model on the gated control… read more here.
Keywords: hemt technology; lfer; compatible gan; gan gate ... See more keywords