Fast-Pulsed Characterization of RF GaN HEMTs in Lifetest Systems
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DOI: 10.1109/tdmr.2016.2628717
Abstract: We report a new application of microsecond-pulsed current–voltage characterization of field-effect transistor (FET) devices; namely, in compact, mutlichannel DC and RF lifetest systems. This application is important for routine monitoring of trap-related signature parameters in… read more here.
Keywords: gan hemts; lifetest systems; characterization gan; pulsed characterization ... See more keywords