Significantly enhanced carrier lifetimes of very long-wave infrared absorbers based on strained-layer InAs/GaInSb superlattices
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DOI: 10.1117/1.oe.56.9.091604
Abstract: Abstract. Significantly improved carrier lifetimes in very long-wave infrared (VLWIR) InAs/GaInSb superlattice (SL) absorbers are demonstrated using time-resolved microwave reflectance (TMR) measurements. A nominal 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb SL structure that produces an ∼25 μm response at 10… read more here.
Keywords: inas gainsb; carrier lifetimes; carrier; lifetimes long ... See more keywords