Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench
Sign Up to like & getrecommendations! Published in 2022 at "Chinese Physics B"
DOI: 10.1088/1674-1056/ac29ac
Abstract: A lateral insulated gate bipolar transistor (LIGBT) based on silicon-on-insulator (SOI) structure is proposed and investigated. This device features a compound dielectric buried layer (CDBL) and an assistant-depletion trench (ADT). The CDBL is employed to… read more here.
Keywords: cdbl; compound dielectric; dielectric buried; ligbt ... See more keywords
A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET
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DOI: 10.1109/jeds.2019.2939223
Abstract: A novel snapback-free and low turn-off loss reverse-conducting (RC) SOI-LIGBT is proposed and investigated by numerical simulations. An n-MOSFET (MN2) is embedded in the anode side of the LIGBT to short the P-anode/N-buffer junction during… read more here.
Keywords: reverse conducting; sub sub; sub; turn loss ... See more keywords
Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET
Sign Up to like & getrecommendations! Published in 2022 at "Nanoscale Research Letters"
DOI: 10.1186/s11671-022-03685-5
Abstract: A novel snapback-free RC-LIGBT with integrated self-biased N-MOSFET is proposed and investigated by simulation. The device features an integrated self-biased N-MOSFET(ISM) on the anode active region. One side of the ISM is shorted to the… read more here.
Keywords: snapback; biased mosfet; self biased; integrated self ... See more keywords