Nitride dot-in-nanowire light emitters with suppressed auger process
Sign Up to like & getrecommendations! Published in 2020 at "Optical Materials"
DOI: 10.1016/j.optmat.2019.109610
Abstract: Abstract In wurtzite III-Nitride nano-devices, the non-radiative Auger recombination is the primary mechanism responsible for the degradation of internal quantum efficiency (IQE), especially under high current density. In this paper, by employing an atomistic tight-binding… read more here.
Keywords: light emitters; recombination; dot nanowire; nanowire light ... See more keywords
Synthesis and characterization of topology-varied organic electroluminescent blue-light emitters based on carbazole and triphenylphosphine oxide derivatives
Sign Up to like & getrecommendations! Published in 2019 at "Synthetic Metals"
DOI: 10.1016/j.synthmet.2019.116220
Abstract: Abstract Two blue light emitters M-2EtCz and P-2EtCz based on carbazole and triphenylphosphine oxide were synthesized and characterized. The 5% weight loss temperatures of emitters M-2EtCz and P-2EtCz solid powder were 437 and 495 °C,… read more here.
Keywords: blue light; triphenylphosphine oxide; light emitters; topology ... See more keywords
Microcavity-Controlled Chirality-Sorted Carbon Nanotube Film Infrared Light Emitters
Sign Up to like & getrecommendations! Published in 2017 at "ACS Photonics"
DOI: 10.1021/acsphotonics.6b00856
Abstract: Applied as on-chip infrared light sources for future nanophotonic circuits and information optoelectronics, light emitters should show a narrow spectral width, strong emission, low onset voltage, and better tunability of light output to an external… read more here.
Keywords: sorted carbon; carbon nanotube; light emitters; infrared light ... See more keywords
InP quantum dots for dislocation-tolerant, visible light emitters on Si
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0030102
Abstract: Quantum dots (QDs) epitaxially grown on Si are promising for monolithic integration of light sources on a Si photonics platform. Unlike quantum well (QW) lasers on Si, 1.3 μm InAs QD lasers on Si show similar… read more here.
Keywords: dislocation; light emitters; qds; dislocation tolerant ... See more keywords
On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ac3710
Abstract: In this work, an alternative scheme to estimate the resistivity and ionization energy of Al-rich p-AlGaN epitaxial films is developed using two large-area ohmic contacts. Accordingly, the resistivities measured using current–voltage measurements were observed to… read more here.
Keywords: iii nitride; electrical analysis; rich algan; light emitters ... See more keywords
Strain relaxation of InGaN/GaN multi-quantum well light emitters via nanopatterning.
Sign Up to like & getrecommendations! Published in 2019 at "Optics express"
DOI: 10.1364/oe.27.030081
Abstract: Strain in InGaN/GaN multiple-quantum well (MQW) light emitters was relaxed via nanopatterning using colloidal lithography and top-down plasma etching. Colloidal lithography was performed using Langmuir-Blodgett dip-coating of samples with silica particles (d = 170, 310, 690, 960… read more here.
Keywords: relaxation; ingan gan; light emitters; strain relaxation ... See more keywords