Quantifying and Overcoming Defect Limitations in High‐Mobility Amorphous p‐Type Tellurium Oxide Transistors
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DOI: 10.1002/adfm.202518364
Abstract: Tellurium (Te)‐based oxide has recently emerged as a promising p‐type oxide semiconductor for thin‐film transistors (TFTs), offering high hole mobility, environmental stability, and compatibility with scalable all‐oxide CMOS architectures. However, a quantitative understanding of their… read more here.
Keywords: limitations high; quantifying overcoming; mobility; type ... See more keywords