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Published in 2018 at "ACS energy letters"
DOI: 10.1021/acsenergylett.8b00002
Abstract: Fundamental limitations of wide-bandgap semiconductor devices are caused by systematic trends of the electron and hole effective mass, dopant ionization energy, and carrier drift mobility as the semiconductor’s bandgap energy increases. We show that when…
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Keywords:
bandgap semiconductors;
bandgap;
wide bandgap;
light emitting ... See more keywords