Theoretical analysis of the mobility of two-dimensional electron gas in the quaternary AlxInyGa1-x-yN/GaN heterojunctions limited by the alloy composition fluctuation
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DOI: 10.1063/1.4985825
Abstract: We established the model of the electron mobility limited by the alloy composition fluctuation scattering in the quaternary AlxInyGa1-x-yN/GaN heterojunctions for the first time. The alloy composition fluctuation along the AlxInyGa1-x-yN/GaN heterointerface was considered and… read more here.
Keywords: alloy composition; alxinyga1 gan; composition fluctuation; limited alloy ... See more keywords