Limiting thickness of pore walls formed in processes of anode etching of heavily doped semiconductors
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DOI: 10.21883/tp.2023.02.55482.224-22
Abstract: With a decrease in the thickness of the walls separating the space of pores in porous semiconductors, the potential energy of interaction between an electron and a donor (or a hole and an acceptor) can… read more here.
Keywords: walls formed; thickness pore; thickness; pore walls ... See more keywords