Exploring an Approach toward the Intrinsic Limits of GaN Electronics
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DOI: 10.1021/acsami.9b19697
Abstract: To fully exploit the advantages of GaN for electronic devices, a critical electric field that approaches its theoretical value (3 MV/cm) is desirable but has not yet been achieved. It is necessary to explore a… read more here.
Keywords: gan electronics; intrinsic limits; toward intrinsic; limits gan ... See more keywords