Study of line edge roughness on various types of gate-all-around field effect transistor
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab52e4
Abstract: The impact of Line Edge Roughness (LER) on Gate-All-Around FETs (GAAFETs) with various channel types is investigated. Among various channel types of GAAFET, (i) nanowire (NW), (ii) nanosheet (NS), and (iii) stacked channel are investigated.… read more here.
Keywords: gaafet; edge roughness; effect; channel gaafet ... See more keywords
Quantitative analysis and modeling of line edge roughness in near-field lithography: toward high pattern quality in nanofabrication
Sign Up to like & getrecommendations! Published in 2019 at "Nanophotonics"
DOI: 10.1515/nanoph-2019-0031
Abstract: Abstract Quantitative analysis of line edge roughness (LER) is very important for understanding the root causes of LER and thereby improving the pattern quality in near-field lithography (NFL), because LER has become the main limiter… read more here.
Keywords: quality; quantitative analysis; near field; edge roughness ... See more keywords