Experimental observation of the linear gain of back-illuminated ultraviolet avalanche photodiodes using a GaN/AlN periodically stacked structure
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DOI: 10.1088/1361-6463/abf957
Abstract: Semiconductor-based avalanche photodiodes (APDs) have the advantages of lower power and simpler fabrication of arrays compared with photomultiplier tubes. It is critical for weak-light imaging that the APD is operated under back illumination and with… read more here.
Keywords: gain; avalanche photodiodes; aln periodically; gan aln ... See more keywords