Novel Linear Graded Binary Metal Alloy PαQ1-α Gate Electrode and Middle N+ Pocket Si0.5Ge0.5 Vertical TFET for High Performance
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DOI: 10.1007/s12633-020-00654-4
Abstract: This paper proposes a novel linear graded binary metal alloy PαQ1-α gate electrode and middle N+ pocket of Si0.5Ge0.5 Vertical-TFET (LGN-VTFET) device structure. The device is gradually developed by considering initially the impact of middle… read more here.
Keywords: si0 5ge0; metal alloy; linear graded; binary metal ... See more keywords