Linearity Performance Analysis of Double Gate (DG) VTFET Using HDB for RF Applications
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DOI: 10.1007/s12633-020-00499-x
Abstract: In recent low-power electronics industry, Tunnel field-effect transistors (TFETs) have shown the superior performance such as decreased leakage current and lower subthreshold slope ( SS ). Previously available research work have recognized the fact that… read more here.
Keywords: linearity performance; linearity; double gate; analysis double ... See more keywords