75–110-GHz $W$ -band High-Linearity Traveling-Wave T/R Switch by Using Negative Gate/Body-Biasing in 90-nm CMOS
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DOI: 10.1109/lmwc.2017.2690837
Abstract: In this letter, a 75–110-GHz W-band high-linearity traveling-wave single-pole-double-throw switch in 90-nm CMOS GUTM 1P9M is presented. Compared with the traditional traveling-wave switch with negative body-biasing technique, the proposed design applies the negative biasing to… read more here.
Keywords: 110 ghz; band high; linearity traveling; ghz band ... See more keywords