NiAl as a potential material for liner- and barrier-free interconnect in ultrasmall technology node
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DOI: 10.1063/1.5049620
Abstract: Because of aggressive downscaling of the dimensions of future semiconductor devices, they will suffer from increased line resistivity and resistance-capacitance delay. In this work, NiAl thin films are investigated as a potential liner- and barrier-free… read more here.
Keywords: free interconnect; barrier free; liner barrier; material ... See more keywords