An 18–31-GHz GaN-Based LNA With 0.8-dB Minimum NF and High Robustness
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DOI: 10.1109/lmwc.2020.3011135
Abstract: Benefited from the high breakdown voltage and low noise characteristics, GaN high-electron mobility transistors (HEMTs) can be used for manufacturing of robust low noise amplifiers (LNAs). Therefore, limiter circuits which protect the entire system are… read more here.
Keywords: lna minimum; minimum high; based lna; gan based ... See more keywords