Strain stiffening, high load-invariant hardness, and electronic anomalies of boron phosphide under pressure
Sign Up to like & getrecommendations! Published in 2020 at "Physical Review B"
DOI: 10.1103/physrevb.101.035302
Abstract: New refractory hard materials with a favorable band gap are in high demand for the next-generation semiconductors capable of withstanding high temperature and other hostile environments. Boron phosphide (BP) is such an attractive candidate with… read more here.
Keywords: load invariant; high load; boron phosphide; invariant hardness ... See more keywords