Study of initiation and development of local oxidation phenomena during anodizing of SiC
Sign Up to like & getrecommendations! Published in 2018 at "Electrochemistry Communications"
DOI: 10.1016/j.elecom.2018.02.013
Abstract: Abstract Even though anodizing has been proved to be a highly efficient oxidation approach of single crystal SiC, the oxidation mechanism is still unrevealed. In this work, the initiation and development of the local oxidation… read more here.
Keywords: anodizing sic; oxidation; initiation development; development local ... See more keywords
In Situ Planarization of Huygens Metasurfaces by Nanoscale Local Oxidation of Silicon
Sign Up to like & getrecommendations! Published in 2017 at "ACS Photonics"
DOI: 10.1021/acsphotonics.7b00688
Abstract: Metasurfaces are becoming a flourishing field of research, with diverse applications, such as planar optical components and structural colors. While metallic metasurfaces are typically few tens of nanometers in their thickness, their dielectric counterparts typically… read more here.
Keywords: oxidation silicon; huygens metasurfaces; silicon; local oxidation ... See more keywords
Analysis of Hump Effect Induced by Positive Bias Temperature Instability in the Local Oxidation of Silicon n-MOSFETs
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2023.3263868
Abstract: In this study, the degradation of the subthreshold swing (S.S.) and the hump effect are observed in the local oxidation of silicon (LOCOS) metal-oxide-semiconductor field-effect transistors (MOSFETs) under short- and long-term positive bias temperature instability… read more here.
Keywords: effect; hump effect; local oxidation; oxidation silicon ... See more keywords